Growth of GaSb / GalnAsSb / GaSb heterostructures using the liquid phase epitaxy technique

Authors

DOI:

https://doi.org/10.33975/riuq.vol19n1.770

Keywords:

Semiconductors, heteroestructure, LPE, XRD, PL

Abstract

In this paper we show some preliminary results of the liquid phase epitaxy growth process for the heterostructures GaSb/GaInAsSb/GaSb. We describe the fabrication process of the heterostructures and also we present the analysis of its X-Ray Diffraction patterns (XRD) and Photoluminescence (PL) characterization. These results evidenced the epitaxial growth of the heterostructures.

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Published

2009-12-31

Issue

Vol. 19 No. 1 (2009)

Section

Original Article

How to Cite

Growth of GaSb / GalnAsSb / GaSb heterostructures using the liquid phase epitaxy technique. (2009). Revista De Investigaciones Universidad Del Quindío, 19(1), 23-27. https://doi.org/10.33975/riuq.vol19n1.770

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