Growth of GaSb / GalnAsSb / GaSb heterostructures using the liquid phase epitaxy technique

Authors

  • José Fernando Gómez Quindio's University
  • Ana Patricia Cardona Quindio's University
  • Marianela De-Los-Ríos Quindio's University
  • Liliana Tirado-Trujillo Quindio's University
  • Hernando Ariza-Calderón Quindio's University

DOI:

https://doi.org/10.33975/riuq.vol19n1.770

Keywords:

Semiconductors, heteroestructure, LPE, XRD, PL

Abstract

In this paper we show some preliminary results of the liquid phase epitaxy growth process for the heterostructures GaSb/GaInAsSb/GaSb. We describe the fabrication process of the heterostructures and also we present the analysis of its X-Ray Diffraction patterns (XRD) and Photoluminescence (PL) characterization. These results evidenced the epitaxial growth of the heterostructures.

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Published

2009-12-31

How to Cite

Gómez, J. F., Cardona, A. P., De-Los-Ríos, M., Tirado-Trujillo, L., & Ariza-Calderón, H. (2009). Growth of GaSb / GalnAsSb / GaSb heterostructures using the liquid phase epitaxy technique. Revista De Investigaciones Universidad Del Quindío, 19(1), 23–27. https://doi.org/10.33975/riuq.vol19n1.770

Issue

Vol. 19 No. 1 (2009)

Section

Original Article

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